SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm FTO Film Coated Glass & Impurity

& Impurity

Mobility:                                                 2180-2190 cmE2/V

Resistivity:                        ( 0

(110V version is available with a 3000W transformer Motor Power AC Motor with 1

Shiny Side Roughness (RZ): 1

SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm FTO Film Coated Glass & ImpuritySpecifications: Film: SiC Epi film with 3C structure grown by PECVD Thickness: 1. 0um + 10% Orientation: 3C SiC (111) Surface: CMP film chemical mechanical polished with Ra < 10 Angstrom Type and dopant: N type, Undoped Surface defects density (microscopic inspection of crystallites or other macro defects) <= 3E3cm^2 TTV 5 29 Bow 9 ~ 3 Silicon substrate: Size: 10x10 x 1. 0 mm thickness Orientation: (111) Type: N type P doped Resistivity: 1 10 ohm. cm