GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 01 -3000PPM ) with KF40

01 -3000PPM ) with KF40 Connector Humidity & Oxygen Purifying system < 1 ppm)

Capable for KSL-1650X-GS65 furnace

2500 ~ 3500

01 Non REO Impurity <0

you must check the substrate by XRD before growing the film

GaP wafer, S doped, (111) orientation, 2" dia x 0.45mm, 1sp Fuse 01 -3000PPM ) with KF40GaP single crystal wafer, Size: 2" diameter(0. 15mm) x 0. 45mm(0. 05mm), Doping: S doped, Conducting type: N type, Orientation: (111)30' Edge Orientation: (110)1 Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100>