Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5 GaAs it has a larger band

it has a larger band gap and excellent IR transmission

Crystal Structure: Hexagonal

Coating area density: 6

One oil-less vacuum pump is included in the standard package

Constant Current & Voltage Charging

Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5 GaAs it has a larger band3" dia. InP InGaAs InP layers on InP (100) by MOCVD deposition Substrate: N type S doped InP [100]0. 5, Nc=~5E18 cc Wafer Size: 3" diameter Thickness: 650+ 25um One side polished, backside etched, US Flats EPI Layer 1: 1um thick InP film, n type Si doped, Nc=~5E15 cc EPI Layer 2: 3. 00. 5m thick, lattice matched In0. 53Ga0. 47As film, n type undoped, Nc=1E15 1E16 cc EPI Layer 3(top): 1um thick InP film, n type Si doped, Nc=1E15 1E16 cc