Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1 Graphite Orientation FlatN/A

Orientation FlatN/A

The temperature profile editor allows the creation of customized recipes for gas flow rate

Surface Polishing:           two sides epi polished

76 Array (Capacity):  3*3=9

failure analysis

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm - SIPa76D05C1R1 Graphite Orientation FlatN/ASingle crystal Si Conductivity: N type ( P doped) Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter x 0. 5 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater