SiC - 6H (0001), 10x10x0.26 mm , two sides polished Bi12GeO20 (BGO20)

SiC - 6H (0001), 10x10x0.26 mm , two sides polished Bi12GeO20 (BGO20)Specifications of Substrate Orientation: <0001> + 0. 5 Dimension: 10x10 x 0. 26 + 0. 03 mm Polished: two sides epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing: Silicon face polished Band Gap: 3. 03 eV ( Indirect) Conductivity type: N TTV Bow Warp: <25 um Micropipe

Length 61mm Width 4mm Thickness 0

You may use silver glue stick spring with spacer to prevent moving

2 CFM @ 90 PSI

L=L1+L2:=200+125=325mm

Power supply 110VAC 50/60 Hz  Features Universal motor

3V) (mAh/g) 195

Note: EPI ready wafers

please contact us for the instruction

Operation Manual

Shipping dimension 45" x 42" x 35"

K type thermocouple extension wire

Doping:                               Sn- doped