LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1 Tube Furnaces Formation conditions: 25°C

Formation conditions: 25°C

the minimum range of pressure control recorded by using the system shown in below is:

and 1/8 NPS valve with installed Mechanical Pressure Gauge

1 E16 cm^-3

(+/-05o) with Standard Flat

LSAT (110) 2" x0.5 mm wafer --- 1 side epi polished - LSATe50D05C1 Tube Furnaces Formation conditions: 25°CLSAT (LaAlO3)0. 3 (Sr2AlTaO6)0. 7 is a newly developing crystal with a perovskite structure and is twin free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at a lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro electronic and superconductive