Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm Ga Nc>2x10^18 /cc

Nc>2x10^18 /cc

EPD:                           < 5x104/cm-2

In course of CVD fabrication of graphene hydrogen and methane gases are introduced into a furnace that heats to 1000° Celsius

5 o Edge direction <001> with notches Polish one side EPI polished with surface roughness Ra< 5 A ( measured by AFM 5x5

Packing:   in 100 class plastic bag in 1000 class clean room

Ge N-type SB-doped (111) 5x5x0.5mm 1sp, R: 0.005-0.01 ohm.cm Ga Nc>2x10^18 /ccSpecifications Growing Method: CZ Wafer Size: 5x5x0. 5 mm Surface Polishing: One side epi polished Orientation: (111) Surface roughness: < 8 A ( by AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 005 0. 01 Ohms cm EPD: N A Package: under 1000 class clean room in wafer container Related Product Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater