50 ohm-cm Al2O3 Melting point: 710 oCGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 Melting point: 710 oC"> 50 ohm-cm Al2O3 Melting point: 710 oCGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> 50 ohm-cm Al2O3 Melting point: 710 oC"> 50 ohm-cm Al2O3 Melting point: 710 oCGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal"> Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 Melting point: 710 oC – iww.cy

New Arrivals are Here-Fast Shipping from Our USA Warehouse

Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 Melting point: 710 oC

$401.93

Quantity
50 ohm-cm Al2O3 Melting point: 710 oC">
Description

Melting point:                                        710 oC

Water Cooling Pump is required (May order at the related product below)

18650 case's grooving  and sealing machine is available upon request

and max loading of 8 Kg per shelf Product Dimensions 23"(L) x 31"(W) x 24"(H) Compliance

Active materials Mass Proportion 96%

Ge Wafer (100) Undoped, 4" dia x 0.5 mm, 2SP, R:>50 ohm-cm Al2O3 Melting point: 710 oCGe Wafer Specification Growing Method: CZ Orientation: (100) + 1. 0 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: Two sides epi polished Surface roughness : RMS or Ra:~ 10 A(By AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal

Shipping Notes
  • Free Standard Shipping on $100+ Orders to the USA.
  • Except Preorder products are shipped in 48 hours.
  • Delivery to the USA:
  1. Standard Shipping : 3-10 business days
  • If time is of the essence, please consider selecting expedited delivery for faster service.

View More

  • Product more
  • Collection:

You may also like

recommand products

50$ Store Credit
Your message