2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm Mixers & Mills

2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm Mixers & Mills2" dia. wafer InGaAs film on InP (Semi insulating)(100) by MOCVD deposition Substrate: InP Orientation: (100) Doped with Fe, Semi Insulating Wafer size: 2" diameter x 0. 35 mm Resistivity:>1x10^7 ohm. cm Both sides polished EPI Film : N type InGaAs(Si doped), (100) Nc>2x10^18 cc Film Thickness : 0. 5 um (+ 20%) Roughness of epi layer is close to 1 mono layer (ML) One the back side we can expect some deposits and we can't guarantee the same quality

One 10mm  I

Temperature Control & Heaters

Surface Density before rolling: 350g/m^2   Length: 300 mm

5 +/- 1 mm) O

D EQ-8mm-1-2-barbed 1/2 INCH  EQ-Fit-3-8-barbed 3/8 INCH

200 kgf/ cm^2

DEmo Video How to make cylindral cell

Max wire diam

Welcome you come to MTI lab at California to do the test before purchase

Force on Hydraulic Cylinder (T)

installation sequence

MTI supplies high quality sintered diamond blades for precision cutting or dicing of various oxide crystals