GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010

GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 270+ 30 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Resistivity

Thickness 16 +/- 1

Doping: un-doped

Customer can consider the following BST8-12

Please always keep the heating or cooling rate less than 5oC/ minute

Please click the picture to find other size coin cell

The amorphous structure  ( no orientation)

Coating thickness: ~143 um

but no Ar gas

It proves inert  for carbon and refractory metals in many severe situations

Density:                           5

1000ºC for DIY a sputtering or Evaporation coater at a lower cost

Thickness:   0