LaAlO3, (100) Orn. 0.5" x 0.5mm wafer 2SP Graphite Plates 5 thickness +/-0

5 thickness +/-0

Set pressure low limit and high limit on digital pressure gauge

Use high purity inert (Ar or N2) gas instead

005 Ohms/cm  (If you would like to measure the resistivity accurately

Warning Attention: Improper use will cause all claims for liability and warranties to be forfeited

LaAlO3, (100) Orn. 0.5" x 0.5mm wafer 2SP Graphite Plates 5 thickness +/-0LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 0. 5" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100)