M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current org in August 2011

org in August 2011

This marking symbol is marked in a manner and location to avoid affecting the user patterning process

静電気の数々の制御方法は，静電気を許容レベル以下に制御するために装置設計に組み込むことができる。このガイドは，基本的には装置製造業者が装置設計を行う際に使用される。

5-0302 (Reapproved 0308)

本仕様は，global Liquid Chemicals Committeeで技術的に承認されている。現版は2010年8月27日，global Audits and Reviews Subcommitteeにて発行が承認された。2010年10月にwww

M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods Revision:SEMI M88-0119 - Current org in August 2011Shrinkage and advanced integration of semiconductor components demand lower metal contamination levels in component fabrication processes and in base silicon wafer substrates. The industry has for some time widely employed surface photovoltage (SPV) measurements of minority carrier diffusion lengths as a technique to assess metal impurities in silicon wafers. Samples, however, often require surface preparation prior to SPV measurements because SPV