MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 an asphyxiant gas

an asphyxiant gas

SEMI F61-0617 (complete rewrite)

This Document does not address the transmission

The purpose of this Standard effort is to provide a common specification for concepts

2 grade nitrogen and argon bulk supply gases

MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities StdPbc-0309 an asphyxiant gasThis Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon. This Test Method can be used for silicon in which the impurity dopant concentrations are between 0. 01 ppba and 5 ppba for each of the electrically active elements. The concentration for each impurity dopant can be obtained by application of Beers Law. Calibration factors are given for